中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing

文献类型:期刊论文

作者Zhao H (Zhao Huan) ; Xu YQ (Xu Ying-Qiang) ; Ni HQ (Ni Hai-Qiao) ; Han Q (Han Qin) ; Wu RH (Wu Rong-Han) ; Niu ZC (Niu Zhi-Chuan)
刊名chinese physics letters
出版日期2006
卷号23期号:9页码:2579-2582
关键词MOLECULAR-BEAM EPITAXY IMPROVED LUMINESCENCE EFFICIENCY ORIGIN
ISSN号0256-307x
通讯作者zhao, h, chinese acad sci, inst semicond, state key lab superlattice & microstruct, pob 912, beijing 100083, peoples r china. e-mail: zhaohuan@red.semi.ac.cn ; zcniu@red.semi.ac.cn
中文摘要we investigate the effect of rapid thermal annealing on inganas/gaas quantum wells. at optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process. to identify the mechanism affecting the material quality during the rapid thermal annealing, differential temperature analysis is applied, and temperature- and power-dependent photoluminescence is carried out on the samples annealed under different conditions. our experiment reveals that some composition redistribution or other related ordering process may occur in the quantum-well layer during annealing. annealing at a lower temperature for a long time primarily can remove defects and dislocations while annealing at a higher temperature for a short time primarily homogenizes the composition in the quantum wells.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-04-11
源URL[http://ir.semi.ac.cn/handle/172111/10422]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zhao H ,Xu YQ ,Ni HQ ,et al. Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing[J]. chinese physics letters,2006,23(9):2579-2582.
APA Zhao H ,Xu YQ ,Ni HQ ,Han Q ,Wu RH ,&Niu ZC .(2006).Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing.chinese physics letters,23(9),2579-2582.
MLA Zhao H ,et al."Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing".chinese physics letters 23.9(2006):2579-2582.

入库方式: OAI收割

来源:半导体研究所

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