Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing
文献类型:期刊论文
作者 | Zhao H (Zhao Huan) ; Xu YQ (Xu Ying-Qiang) ; Ni HQ (Ni Hai-Qiao) ; Han Q (Han Qin) ; Wu RH (Wu Rong-Han) ; Niu ZC (Niu Zhi-Chuan) |
刊名 | chinese physics letters
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出版日期 | 2006 |
卷号 | 23期号:9页码:2579-2582 |
关键词 | MOLECULAR-BEAM EPITAXY IMPROVED LUMINESCENCE EFFICIENCY ORIGIN |
ISSN号 | 0256-307x |
通讯作者 | zhao, h, chinese acad sci, inst semicond, state key lab superlattice & microstruct, pob 912, beijing 100083, peoples r china. e-mail: zhaohuan@red.semi.ac.cn ; zcniu@red.semi.ac.cn |
中文摘要 | we investigate the effect of rapid thermal annealing on inganas/gaas quantum wells. at optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process. to identify the mechanism affecting the material quality during the rapid thermal annealing, differential temperature analysis is applied, and temperature- and power-dependent photoluminescence is carried out on the samples annealed under different conditions. our experiment reveals that some composition redistribution or other related ordering process may occur in the quantum-well layer during annealing. annealing at a lower temperature for a long time primarily can remove defects and dislocations while annealing at a higher temperature for a short time primarily homogenizes the composition in the quantum wells. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-04-11 |
源URL | [http://ir.semi.ac.cn/handle/172111/10422] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Zhao H ,Xu YQ ,Ni HQ ,et al. Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing[J]. chinese physics letters,2006,23(9):2579-2582. |
APA | Zhao H ,Xu YQ ,Ni HQ ,Han Q ,Wu RH ,&Niu ZC .(2006).Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing.chinese physics letters,23(9),2579-2582. |
MLA | Zhao H ,et al."Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing".chinese physics letters 23.9(2006):2579-2582. |
入库方式: OAI收割
来源:半导体研究所
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