Influence of GaAsP insertion layers on performance of InGaAsP/InGaP/AlGaAs quantum-well laser
文献类型：期刊论文
| 作者 | Cao YL (Cao Yu-Lian) ; Lian P (Lian Peng) ; Ma WQ (Ma Wen-Quan) ; Wang Q (Wang Qing) ; Wu XM (Wu Xu-Ming) ; He GR (He Guo-Rong) ; Li H (Li Hui) ; Wang XD (Wang Xiao-Dong) ; Song GF (Song Guo-Feng) ; Chen LH (Chen Liang-Hui) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 23期号:9页码:2583-2586 |
| 关键词 | VAPOR-PHASE EPITAXY DIODE-LASERS INTERFACE CHARACTERISTICS GROWTH SEQUENCE MOVPE GROWTH LP-MOVPE HETEROSTRUCTURES HETEROJUNCTION POWER NM |
| ISSN号 | 0256-307x |
| 通讯作者 | cao, yl, chinese acad sci, inst semicond, lab nanooptoelect, beijing 100083, peoples r china. e-mail: caoyl@semi.ac.cn |
| 中文摘要 | we report on the use of very thin gaasp insertion layers to improve the performance of an ingaasp/ingap/algaas single quantum-well laser structure grown by metal organic chemical vapour deposition. compared to the non-insertion structure, the full width at half maximum of photoluminescence spectrum of the insertion structure measured at room temperature is decreased from 47 to 38 nm indicating sharper interfaces. x-ray diffraction shows that the gaasp insertion layers between algaas and ingap compensates for the compressive strain to improve the total interface. the laser performance of the insertion structure is significantly improved as compared with the counterpart without the insertion layers. the threshold current is decreased from 560 to 450ma while the slope efficiency is increased from 0.61 to 0.7w/a and the output power is increased from 370 to 940mw. the slope efficiency improved is very high for the devices without coated facets. the improved laser performance is attributed to the suppression of indium carry-over due to the use of the gaasp insertion layers. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10424]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Cao YL ,Lian P ,Ma WQ ,et al. Influence of GaAsP insertion layers on performance of InGaAsP/InGaP/AlGaAs quantum-well laser[J]. chinese physics letters,2006,23(9):2583-2586. |
| APA | Cao YL .,Lian P .,Ma WQ .,Wang Q .,Wu XM .,...&Chen LH .(2006).Influence of GaAsP insertion layers on performance of InGaAsP/InGaP/AlGaAs quantum-well laser.chinese physics letters,23(9),2583-2586. |
| MLA | Cao YL ,et al."Influence of GaAsP insertion layers on performance of InGaAsP/InGaP/AlGaAs quantum-well laser".chinese physics letters 23.9(2006):2583-2586. |
入库方式： OAI收割
来源：半导体研究所
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