Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer
文献类型：期刊论文
| 作者 | Wang JF (Wang Jian-Feng) ; Zhang BS (Zhang Bao-Shun) ; Zhang JC (Zhang Ji-Cai) ; Zhu JJ (Zhu Jian-Jun) ; Wang YT (Wang Yu-Tian) ; Chen J (Chen Jun) ; Liu W (Liu Wei) ; Jiang DS (Jiang De-Sheng) ; Yao DZ (Yao Duan-Zheng) ; Yang H (Yang Hui) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 23期号:9页码:2591-2594 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION HIGH-QUALITY GAN ALN BUFFER LAYER NUCLEATION LAYER PHASE EPITAXY EVOLUTION DENSITY SILICON STRESS SI |
| ISSN号 | 0256-307x |
| 通讯作者 | wang, jf, wuhan univ, dept phys, wuhan 430072, peoples r china. e-mail: wlino@semi.ac.cn |
| 中文摘要 | gan intermedial layers grown under different pressures are inserted between gan epilayers and aln/si(111) substrates. in situ optical reflectivity measurements show that a transition from the three-dimensional (3d) mode to the 2d one occurs during the gan epilayer growth when a higher growth pressure is used during the preceding gan intermedial layer growth, and an improvement of the crystalline quality of gan epilayer will be made. combining the in situ reflectivity and transmission electron microscopy (tem) measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10426]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang JF ,Zhang BS ,Zhang JC ,et al. Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer[J]. chinese physics letters,2006,23(9):2591-2594. |
| APA | Wang JF .,Zhang BS .,Zhang JC .,Zhu JJ .,Wang YT .,...&Yang H .(2006).Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer.chinese physics letters,23(9),2591-2594. |
| MLA | Wang JF ,et al."Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer".chinese physics letters 23.9(2006):2591-2594. |
入库方式： OAI收割
来源：半导体研究所
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