Measurement of threading dislocation densities in GaN by wet chemical etching
文献类型：期刊论文
| 作者 | Yang H; Zhu JJ ; Yang H; Wang H; Wang H; Zhao DG; Jiang DS; Zhang SM
|
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2006 |
| 卷号 | 21期号:9页码:1229-1235 |
| 关键词 | X-RAY-DIFFRACTION |
| ISSN号 | 0268-1242 |
| 通讯作者 | chen, j, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. e-mail: jchen@red.semi.ac.cn |
| 中文摘要 | we demonstrate a technique based on wet chemical etching that enables quick and accurate evaluation of edge- and screw/mixed-type threading dislocations (tds) in gan. large and small etch pits are formed by phosphoric acid on the etched surfaces. the large etch pits are attributed to screw/mixed tds and the small ones to edge tds, according to their locations on the surface and burgers vectors of tds. additionally, the origin of small etch pits is confirmed by a transmission electron microscopy. the difference in the size of etch pits is discussed in view of their origin and merging. overetching at elevated temperatures or for a long time may result in merging of individual etch pits and underestimating of the density of tds. wet chemical etching has also been proved efficient in revealing the distribution of tds in epitaxial lateral overgrowth gan. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10436]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang H,Zhu JJ,Yang H,et al. Measurement of threading dislocation densities in GaN by wet chemical etching[J]. semiconductor science and technology,2006,21(9):1229-1235. |
| APA | Yang H.,Zhu JJ.,Yang H.,Wang H.,Wang H.,...&Zhang SM.(2006).Measurement of threading dislocation densities in GaN by wet chemical etching.semiconductor science and technology,21(9),1229-1235. |
| MLA | Yang H,et al."Measurement of threading dislocation densities in GaN by wet chemical etching".semiconductor science and technology 21.9(2006):1229-1235. |
入库方式： OAI收割
来源：半导体研究所
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