Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy
文献类型：期刊论文
| 作者 | Zhao L (Zhao Lei) ; Chen YH (Chen Yong-hai) ; Zuo YH (Zuo Yu-hua) ; Wang HN (Wang Hai-ning) ; Shi WH (Shi Wen-hua) |
| 刊名 | spectroscopy and spectral analysis
 |
| 出版日期 | 2006 |
| 卷号 | 26期号:7页码:1185-1189 |
| 关键词 | reflectance difference spectroscopy semiconductor in-plane optical anisotropy electrooptic modification SURFACE INTERFACE GROWTH |
| ISSN号 | 1000-0593 |
| 通讯作者 | zhao, l, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. |
| 中文摘要 | in the present review, the measuring principle of reflectance difference spectroscopy (rds) is given. as a powerful tool in the surface and interface analysis technologies, the application of rds to the research on semiconductor materials is summarized. along with the origins of the in-plane optical anisotropy of semiconductors. and it is believed that rds will play an important role in the electrooptic modification of si-based semiconductor materials. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10444]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao L ,Chen YH ,Zuo YH ,et al. Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy[J]. spectroscopy and spectral analysis,2006,26(7):1185-1189. |
| APA | Zhao L ,Chen YH ,Zuo YH ,Wang HN ,&Shi WH .(2006).Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy.spectroscopy and spectral analysis,26(7),1185-1189. |
| MLA | Zhao L ,et al."Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy".spectroscopy and spectral analysis 26.7(2006):1185-1189. |
入库方式： OAI收割
来源：半导体研究所
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