Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering
文献类型：期刊论文
| 作者 | Zhang CG ; Blan LF ; Chen WD ; Hsu CC |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2006 |
| 卷号 | 293期号:2页码:258-262 |
| 关键词 | radio-frequency magnetron sputtering |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhang, cg, chinese acad sci, inst semicond, state key lab surface phys, pob 912, beijing 100083, peoples r china. e-mail: zhangcg@semi.ac.cn |
| 中文摘要 | we have successfully prepared a high-quality 2 mu m-thick gan film with three inserted 30 nm-thick zno interlayers on si (111) substrate without cracks by magnetron sputtering. the effects of the thickness and number of zno interlayers on the crystal quality of the gan films were studied. it was found that the gan crystal quality initially improved with the increase of the thickness of zno interlayers, but deteriorated quickly when the thickness exceeded 30 nm. multiple zno interlayers were used as an effective means to further improve the crystal quality of the gan film. by increasing the number of interlayers up to three, the cracks can be constrained to a certain extent, and the crystal quality of the gan film greatly improved. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10450]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang CG,Blan LF,Chen WD,et al. Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering[J]. journal of crystal growth,2006,293(2):258-262. |
| APA | Zhang CG,Blan LF,Chen WD,&Hsu CC.(2006).Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering.journal of crystal growth,293(2),258-262. |
| MLA | Zhang CG,et al."Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering".journal of crystal growth 293.2(2006):258-262. |
入库方式： OAI收割
来源：半导体研究所
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