中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition

文献类型:期刊论文

作者Huang Y (Huang Y.) ; Wang H (Wang H.) ; Sun Q (Sun Q.) ; Chen J (Chen J.) ; Li DY (Li D. Y.) ; Zhang JC (Zhang J. C.) ; Wang JF (Wang J. F.) ; Wang YT (Wang Y. T.) ; Yang H (Yang H.)
刊名journal of crystal growth
出版日期2006
卷号293期号:2页码:269-272
关键词growth mode X-ray diffraction metalorganic chemical vapor deposition indium nitride X-RAY-DIFFRACTION THREADING DISLOCATIONS ELECTRON-TRANSPORT BUFFER LAYER THIN-FILMS GAN FILMS SAPPHIRE ALN
ISSN号0022-0248
通讯作者wang, h, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. e-mail: wangh@red.semi.ac.cn
中文摘要mosaic structure in inn layers grown by metalorganic chemical vapor deposition at various temperatures has been investigated by x-ray diffraction (xrd). with a combination of williamson-hall measurement and fitting of twist angles, it was found that variation of growth temperature from 450 to 550 degrees c leads to the variation of the lateral coherence length, vertical coherence length, tilt and twist of mosaic blocks in inn films in a, respectively, monotonic way. in particular, mosaic tilt increases whereas mosaic twist decreases with elevating temperature. atomic force microscopy shows the morphological difference of the inn nucleation layers grown at 450 and 550 degrees c. different coalescence thickness and temperature-dependent in-plane rotation of inn nuclei are considered to account for the xrd results. (c) 2006 elsevier b.v. all rights reserved.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-04-11
源URL[http://ir.semi.ac.cn/handle/172111/10452]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Huang Y ,Wang H ,Sun Q ,et al. Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition[J]. journal of crystal growth,2006,293(2):269-272.
APA Huang Y .,Wang H .,Sun Q .,Chen J .,Li DY .,...&Yang H .(2006).Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition.journal of crystal growth,293(2),269-272.
MLA Huang Y ,et al."Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition".journal of crystal growth 293.2(2006):269-272.

入库方式: OAI收割

来源:半导体研究所

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