Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Cui LJ (Cui L. J.) ; Zeng YP (Zeng Y. P.) ; Wang BQ (Wang B. Q.) ; Zhu ZP (Zhu Z. P.) |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2006 |
| 卷号 | 293期号:2页码:291-293 |
| 关键词 | characterization point defects molecular beam epitaxy semiconducting gallium compounds semiconducting indium compounds semiconducting ternary compounds 1.55 MU-M QUANTUM-WELLS TEMPERATURE GAAS |
| ISSN号 | 0022-0248 |
| 通讯作者 | cui, lj, chinese acad sci, inst semicond, novel mat lab, beijing 100083, peoples r china. e-mail: ljcui@red.semi.ac.cn |
| 中文摘要 | a series of 1-mu m-thick undoped in0.53ga0.47as with different substrate growth temperature (t-g) or different beam flux pressure (bfp) of as were grown on lattice-matched semi-insulating inp (001) substrates by molecular beam epitaxy (mbe). van der pauw hall measurements were carried out for these in0.53ga0.47as samples. the residual electron concentration decreased with increasing temperature from 77 to 140 k, but increased with increasing temperature from 140 to 300 k. rapid thermal annealing (rta) can reduce the residual electron concentration. the residual electron mobility increased with increasing temperature from 77 to 300 k. all these electrical properties are associated with as antisite defects. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10454]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Cui LJ ,Zeng YP ,Wang BQ ,et al. Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy[J]. journal of crystal growth,2006,293(2):291-293. |
| APA | Cui LJ ,Zeng YP ,Wang BQ ,&Zhu ZP .(2006).Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy.journal of crystal growth,293(2),291-293. |
| MLA | Cui LJ ,et al."Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy".journal of crystal growth 293.2(2006):291-293. |
入库方式： OAI收割
来源：半导体研究所
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