Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates
文献类型：期刊论文
| 作者 | Cui LJ (Cui L. J.) ; Zeng YP (Zeng Y. P.) ; Wang BQ (Wang B. Q.) ; Zhu ZP (Zhu Z. P.) ; Guo SL (Guo S. L.) ; Chu JH (Chu J. H.) |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2006 |
| 卷号 | 100期号:3页码:art.no.033705 |
| 关键词 | QUANTUM-WELL STRUCTURES PHOTOLUMINESCENCE SPECTRA HEMTS |
| ISSN号 | 0021-8979 |
| 通讯作者 | cui, lj, chinese acad sci, novel mat lab, inst semicond, beijing 100083, peoples r china. e-mail: ljcui@red.semi.ac.cn |
| 中文摘要 | 4.2 k photoluminescence (pl) and 77 k standard hall-effect measurements were performed for in0.52al0.48as/inxga1-xas metamorphic high-electron-mobility-transistor (hemt) structures grown on gaas substrates with different indium contents in the inxga1-xas well or different si delta-doping concentrations. it was found that electron concentrations increased with increasing pl intensity ratio of the "forbidden" transition (the second electron subband to the first heavy-hole subband) to the sum of the "allowed" transition (the first electron subband to the first heavy-hole subband) and the forbidden transition. and electron mobilities decreased with increasing product of the average full width at half maximum of allowed and forbidden transitions and the electron effective mass in the inxga1-xas quantum well. these results show that pl measurements are a good supplemental tool to hall-effect measurements in optimization of the hemt layer structure. (c) 2006 american institute of physics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10458]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Cui LJ ,Zeng YP ,Wang BQ ,et al. Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates[J]. journal of applied physics,2006,100(3):art.no.033705. |
| APA | Cui LJ ,Zeng YP ,Wang BQ ,Zhu ZP ,Guo SL ,&Chu JH .(2006).Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates.journal of applied physics,100(3),art.no.033705. |
| MLA | Cui LJ ,et al."Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates".journal of applied physics 100.3(2006):art.no.033705. |
入库方式： OAI收割
来源：半导体研究所
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