中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Shrinkage of nanocavities in silicon during electron beam irradiation

文献类型:期刊论文

作者Zhu XF (Zhu Xianfang)
刊名journal of applied physics
出版日期2006
卷号100期号:3页码:art.no.034304
关键词PREFERENTIAL AMORPHIZATION ION IRRADIATION AMORPHOUS SI IN-SITU VOIDS
ISSN号0021-8979
通讯作者zhu, xf, xiamen univ, dept phys, lab low dimens nanostruct, xiamen 316005, peoples r china. e-mail: xianfangzhu@hotmail.com
中文摘要an internal shrinkage of nanocavity in silicon was in situ observed under irradiation of energetic electron on electron transmission microscopy. because there is no addition of any external materials to cavity site, a predicted nanosize effect on the shrinkage was observed. at the same time, because there is no ion cascade effect as encountered in the previous ion irradiation-induced nanocavity shrinkage experiment, the electron irradiation-induced instability of nanocavity also provides a further more convincing evidence to demonstrate the predicted irradiation-induced athermal activation effect. (c) 2006 american institute of physics.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-04-11
源URL[http://ir.semi.ac.cn/handle/172111/10460]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zhu XF . Shrinkage of nanocavities in silicon during electron beam irradiation[J]. journal of applied physics,2006,100(3):art.no.034304.
APA Zhu XF .(2006).Shrinkage of nanocavities in silicon during electron beam irradiation.journal of applied physics,100(3),art.no.034304.
MLA Zhu XF ."Shrinkage of nanocavities in silicon during electron beam irradiation".journal of applied physics 100.3(2006):art.no.034304.

入库方式: OAI收割

来源:半导体研究所

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