Thermal stress analysis for GaInAsP multiple quantum well wafer chemically bonded to Si (100)
文献类型：期刊论文
| 作者 | Zhao HQ (Zhao Hong-Quan) ; Yu LJ (Yu Li-Juan) ; Huang YZ (Huang Yong-Zhen) |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2006 |
| 卷号 | 100期号:2页码:art.no.023513 |
| 关键词 | ACTIVATED BONDING METHOD ROOM-TEMPERATURE EPITAXIAL OVERGROWTHS SURFACE CRYSTAL GAAS TECHNOLOGY ENERGY FILMS |
| ISSN号 | 0021-8979 |
| 通讯作者 | zhao, hq, chinese acad sci, state key lab integrated optoelect, inst semicond, pob 912, beijing 100083, peoples r china. e-mail: zhggeneral@red.semi.ac.cn |
| 中文摘要 | an n-inp-based ingaasp multiple-quantum-well wafer was bonded with p-si by chemical surface activated bonding at 70 degrees c, and then annealed at 450 degrees c. different thermal expansion coefficients between inp and si will induce thermal stresses in the bonded wafer. planar and cross-sectional distributions of thermal stress in the bonded inp-si pairs were analyzed by a two-dimensional finite element method. in addition, the normal, peeling, and shear stresses were calculated by an analytic method. furthermore, x-ray double crystalline diffraction was applied to measure the thermal strain and the strain caused by the mismatching of the crystalline orientation between inp (100) and si (100). the wavelength redshift of the photoluminescence (pl) spectrum due to thermal strain was investigated via the calculation of the band structure, which is in agreement with the measured pl spectra. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10470]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao HQ ,Yu LJ ,Huang YZ . Thermal stress analysis for GaInAsP multiple quantum well wafer chemically bonded to Si (100)[J]. journal of applied physics,2006,100(2):art.no.023513. |
| APA | Zhao HQ ,Yu LJ ,&Huang YZ .(2006).Thermal stress analysis for GaInAsP multiple quantum well wafer chemically bonded to Si (100).journal of applied physics,100(2),art.no.023513. |
| MLA | Zhao HQ ,et al."Thermal stress analysis for GaInAsP multiple quantum well wafer chemically bonded to Si (100)".journal of applied physics 100.2(2006):art.no.023513. |
入库方式： OAI收割
来源：半导体研究所
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