Near infrared photoluminescence from Yb,Al Co-implanted SiO2 films on silicon
文献类型：期刊论文
| 作者 | Zhang JG (Zhang Jian-Guo) ; Wang XX (Wang Xiao-Xin) ; Cheng BW (Cheng Bu-Wen) ; Yu JZ (Yu Jin-Zhong) ; Wang QM (Wang Qi-Ming) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 23期号:8页码:2183-2186 |
| 关键词 | SI-NANOCRYSTALS MU-M ENERGY-TRANSFER RICH SIO2 LUMINESCENCE EXCITATION EMISSION IONS FLUORESCENCE WAVELENGTH |
| ISSN号 | 0256-307x |
| 通讯作者 | zhang, jg, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. e-mail: jianguochang@yahoo.com |
| 中文摘要 | intense room-temperature near infrared (nir) photoluminescence (980 nm and 1032 nm) is observed from yb,al co-implanted sio2 films on silicon. the optical transitions occur between the f-2(5/2) and f-2(7/2) levels of yb3+ in sio2. the additional al-implantation into sio2 films can effectively improve the concentration quenching effect of yb3+ in sio2. photoluminescence exitation sprectroscopy shows that the nir photoluminescence is due to the non-radiative energy transfer from al-implantation-induced non-bridging oxygen hole defects in sio2 to yb3+ in the yb-related luminescent complexes. it is believed that the defect-mediated luminscence of rare-earth ions in sio2 is very effective. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10474]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang JG ,Wang XX ,Cheng BW ,et al. Near infrared photoluminescence from Yb,Al Co-implanted SiO2 films on silicon[J]. chinese physics letters,2006,23(8):2183-2186. |
| APA | Zhang JG ,Wang XX ,Cheng BW ,Yu JZ ,&Wang QM .(2006).Near infrared photoluminescence from Yb,Al Co-implanted SiO2 films on silicon.chinese physics letters,23(8),2183-2186. |
| MLA | Zhang JG ,et al."Near infrared photoluminescence from Yb,Al Co-implanted SiO2 films on silicon".chinese physics letters 23.8(2006):2183-2186. |
入库方式： OAI收割
来源：半导体研究所
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