Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices
文献类型：期刊论文
| 作者 | Wang BZ (Wang Bao-Zhu) ; Wang XL (Wang Xiao-Liang) ; Hu GX (Hu Guo-Xin) ; Ran JX (Ran Jun-Xue) ; Wang XH (Wang Xin-Hua) ; Guo LC (Guo Lun-Chun) ; Xiao HL (Xiao Hong-Ling) ; Li JP (Li Jian-Ping) ; Zeng YP (Zeng Yi-Ping) ; Li JM (Li Jin-Min) ; Wang ZG (Wang Zhan-Guo) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 23期号:8页码:2187-2189 |
| 关键词 | LIGHT-EMITTING-DIODES |
| ISSN号 | 0256-307x |
| 通讯作者 | wang, bz, chinese acad sci, inst semicond, beijing 100083, peoples r china. e-mail: wangbz@semi.ac.cn |
| 中文摘要 | mg-doped algan and gan/algan superlattice are grown by metalorganic chemical vapour deposition (mocvd). rapid thermal annealing (rta) treatments are carried out on the samples. hall and high resolution x-ray diffraction measurements are used to characterize the electrical and structural prosperities of the as-grown and annealed samples, respectively. the results of hall measurements show that after annealing, the mg-doped algan sample can not obtain the distinct hole concentration and can acquire a resistivity of 1.4 x 10(3) omega cm. however, with the same annealing treatment, the gan/algan superlattice sample has a hole concentration of 1.7 x 10(17) cm(-3) and of mg acceptors, which leads to higher hole concentration and lower p-type resistivity. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10476]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang BZ ,Wang XL ,Hu GX ,et al. Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices[J]. chinese physics letters,2006,23(8):2187-2189. |
| APA | Wang BZ .,Wang XL .,Hu GX .,Ran JX .,Wang XH .,...&Wang ZG .(2006).Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices.chinese physics letters,23(8),2187-2189. |
| MLA | Wang BZ ,et al."Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices".chinese physics letters 23.8(2006):2187-2189. |
入库方式： OAI收割
来源：半导体研究所
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