Large g factors of higher-lying excitons detected with reflectance difference spectroscopy in GaAs-based quantum wells
文献类型：期刊论文
| 作者 | Chen YH (Chen Y. H.) ; Ye XL (Ye X. L.) ; Xu B (Xu B.) ; Wang ZG (Wang Z. G.) ; Yang Z (Yang Z.) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 89期号:5页码:art.no.051903 |
| ISSN号 | 0003-6951 |
| 关键词 | EXCHANGE INTERACTION HEAVY-HOLE ELECTRON SUPERLATTICES |
| 通讯作者 | chen, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | exciton g factors in gaas-based quantum wells (qws) were evaluated by reflectance difference spectroscopy (rds) under a weak magnetic field. the well-width dependence of the n=1 heavy-hole exciton (1h1e) g factor agrees well with the reported results, demonstrating rds as a sensitive tool for detection of g factor. by comparison, the n=1 light-hole exciton g factor increases with the well width, and shows a larger value than that of 1h1e. in a 20-nm-wide al0.02ga0.98as/alas multiple qw sample, the g factors of up to ten excitons are obtained, and the higher-lying exciton g factors are found to be one order larger than that of the 1h1e exciton. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10480]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen YH ,Ye XL ,Xu B ,et al. Large g factors of higher-lying excitons detected with reflectance difference spectroscopy in GaAs-based quantum wells[J]. applied physics letters,2006,89(5):art.no.051903. |
| APA | Chen YH ,Ye XL ,Xu B ,Wang ZG ,&Yang Z .(2006).Large g factors of higher-lying excitons detected with reflectance difference spectroscopy in GaAs-based quantum wells.applied physics letters,89(5),art.no.051903. |
| MLA | Chen YH ,et al."Large g factors of higher-lying excitons detected with reflectance difference spectroscopy in GaAs-based quantum wells".applied physics letters 89.5(2006):art.no.051903. |
入库方式： OAI收割
来源：半导体研究所
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