Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts
文献类型：期刊论文
| 作者 | Wang RX (Wang R. X.) ; Xu SJ (Xu S. J.) ; Djurisic AB (Djurisic A. B.) ; Beling CD (Beling C. D.) ; Cheung CK (Cheung C. K.) ; Cheung CH (Cheung C. H.) ; Fung S (Fung S.) ; Zhao DG (Zhao D. G.) ; Yang H (Yang H.) ; Tao XM (Tao X. M.) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 89期号:3页码:art.no.033503 |
| 关键词 | MOLECULAR-BEAM EPITAXY N-TYPE GAN ELECTRICAL-PROPERTIES BIAS LEAKAGE DIODES OXYGEN |
| ISSN号 | 0003-6951 |
| 通讯作者 | xu, sj, univ hong kong, dept phys, pokfulam rd, hong kong, hong kong, peoples r china. e-mail: sjxu@hkucc.hku.hk |
| 中文摘要 | indium-tin-oxide (ito)/n-gan schottky contacts were prepared by e-beam evaporation at 200 degrees c under various partial pressures of oxygen. x-ray photoemission spectroscopy and positron beam measurements were employed to obtain chemical and structural information of the deposited ito films. the results indicated that the observed variation in the reverse leakage current of the schottky contact and the optical transmittance of the ito films were strongly dependent on the quality of the ito film. the high concentration of point defects at the ito-gan interface is suggested to be responsible for the large observed leakage current of the ito/n-gan schottky contacts. (c) 2006 american institute of physics. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10494]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang RX ,Xu SJ ,Djurisic AB ,et al. Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts[J]. applied physics letters,2006,89(3):art.no.033503. |
| APA | Wang RX .,Xu SJ .,Djurisic AB .,Beling CD .,Cheung CK .,...&Tao XM .(2006).Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts.applied physics letters,89(3),art.no.033503. |
| MLA | Wang RX ,et al."Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts".applied physics letters 89.3(2006):art.no.033503. |
入库方式： OAI收割
来源：半导体研究所
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