The Stark effect on excitons in a bilayer system
文献类型：期刊论文
| 作者 | Wang L (Wang Li) ; Li SS (Li Shu-Shen) |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2006 |
| 卷号 | 100期号:1页码:art.no.013512 |
| 关键词 | BOSE-EINSTEIN CONDENSATION QUANTUM-WELLS DOTS |
| ISSN号 | 0021-8979 |
| 通讯作者 | wang, l, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. e-mail: wangli@mail.semi.ac.cn |
| 中文摘要 | the stark effect on excitons in a bilayer system is investigated theoretically within the framework of the effective-mass approximation. the calculations indicate that the energy of the excitons decreases as the value of the in-plane electric field f increases at a fixed value of the distance d between the layers. however, the energy of the excitons increases with d at a fixed value of f. in particular, it increases linearly at small values of d but increases as 1/d at large values. therefore, it can be concluded that excitons in a bilayer system have a small binding energy equal to the absolute value of the excitonic energy at large d or small f. in addition, the radiative lifetime of heavy-hole excitons in this system is calculated and is found to be short at small values of both f and d. the radiative lifetime of heavy-hole excitons in a bilayer system can be increased by two orders by an in-plane electric field of 2 kv/cm when d is twice the excitonic rydberg. (c) 2006 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10500]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang L ,Li SS . The Stark effect on excitons in a bilayer system[J]. journal of applied physics,2006,100(1):art.no.013512. |
| APA | Wang L ,&Li SS .(2006).The Stark effect on excitons in a bilayer system.journal of applied physics,100(1),art.no.013512. |
| MLA | Wang L ,et al."The Stark effect on excitons in a bilayer system".journal of applied physics 100.1(2006):art.no.013512. |
入库方式： OAI收割
来源：半导体研究所
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