Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE
文献类型：期刊论文
| 作者 | Feng W (Feng W.) ; Pan JQ (Pan J. Q.) ; Zhou F (Zhou F.) ; Yang H (Yang H.) ; Zhao LJ (Zhao L. J.) ; Zhu HL (Zhu H. L.) ; Wang W (Wang W.) |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2006 |
| 卷号 | 21期号:7页码:841-845 |
| ISSN号 | 0268-1242 |
| 关键词 | VAPOR-PHASE EPITAXY BURIED-HETEROSTRUCTURE LASERS QUANTUM-WELL STRUCTURES BANDGAP ENERGY CONTROL LAYERS INGAASP |
| 通讯作者 | feng, w, chinese acad sci, state key lab integrated optoelect, inst semicond, pob 912, beijing 100080, peoples r china. e-mail: wfeng@semi.ac.cn |
| 中文摘要 | narrow stripe selective growth of oxide-free ingaalas/ingaalas multiple quantum wells (mqws) has been successfully performed on patterned inp substrates by ultra-low pressure movpe. flat and clear interfaces were obtained for the narrow stripe selectively grown mqws under optimized growth conditions. these selectively grown mqws were covered by specific inp layers, which can keep the mqws from being oxidized during the fabrication of the devices. the characteristics of selectively grown mqws were strongly dependent on the mask stripe width. in particular, a pl peak wavelength shift of 73 nm, a pl intensity of more than 57% and a pl fwhm of less than 102 mev were observed simultaneously with a small mask stripe width varying from 0 to 40 mu m. the results were explained by considering the migration effect from the masked region (mmr) and the lateral vapour diffusion effect (lvd). |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10526]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Feng W ,Pan JQ ,Zhou F ,et al. Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE[J]. semiconductor science and technology,2006,21(7):841-845. |
| APA | Feng W .,Pan JQ .,Zhou F .,Yang H .,Zhao LJ .,...&Wang W .(2006).Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE.semiconductor science and technology,21(7),841-845. |
| MLA | Feng W ,et al."Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE".semiconductor science and technology 21.7(2006):841-845. |
入库方式： OAI收割
来源：半导体研究所
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