Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Wu JJ (Wu Jiejun) ; Han XX (Han Xiuxun) ; Li JM (Li Jiemin) ; Wei HY (Wei Hongyuan) ; Cong GW (Cong Guangwei) ; Liu XL (Liu Xianglin) ; Zhu QS (Zhu Qinsheng) ; Wang ZG (Wang Zhanguo) ; Jia QJ (Jia Quanjie) ; Guo LP (Guo Liping) ; Hu TD (Hu Tiandou) ; Wang HH (Wang Huanhua) |
| 刊名 | optical materials
 |
| 出版日期 | 2006 |
| 卷号 | 28期号:10页码:1227-1231 |
| ISSN号 | 0925-3467 |
| 关键词 | in doping cracks Si(111) substrate LT-AlGaN interlayer metalorganic chemical vapor deposition GaN PHASE EPITAXY INDIUM-SURFACTANT OPTICAL-PROPERTIES SI(111) STRESS FILMS |
| 通讯作者 | wu, jj, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: jiejunw@red.semi.ac.cn |
| 中文摘要 | the effects of in doped low-temperature (lt) algan interlayer on the properties of gan/si(111) by mocvd have been investigated. using in doping lt-interlayer can decrease the stress sufficiently for avoiding crack formation in a thick (2.0 mu m) gan layer. significant improvement in the crystal and optical properties of gan layer is also achieved. in doping is observed to reduce the stress in algan interlayer measured by high-resolution x-ray diffraction (hrxrd). it can provide more compressive stress to counteract tensile stress and reduce crack density in subsequent gan layer. moreover, as a surfactant, indium is observed to cause an enhanced pl intensity and the narrowed linewidths of pl and xrd spectra for the lt-interlayer. additionally, the crystal quality of gan layer is found to be dependent on the growth parameters of underneath in-doped lt-algan interlayer. the optimal parameters, such as tmin flow rate, tmal flow rates and thickness, are achieved to obtain nearly 2.0 mu m thick crack free gan film with advanced optical and crystal properties. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10528]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wu JJ ,Han XX ,Li JM ,et al. Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition[J]. optical materials,2006,28(10):1227-1231. |
| APA | Wu JJ .,Han XX .,Li JM .,Wei HY .,Cong GW .,...&Wang HH .(2006).Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition.optical materials,28(10),1227-1231. |
| MLA | Wu JJ ,et al."Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition".optical materials 28.10(2006):1227-1231. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。