Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth
文献类型：期刊论文
| 作者 | Zhao C (Zhao C.) ; Chen YH (Chen Y. H.) ; Zhao M (Zhao Man) ; Zhang CL (Zhang C. L.) ; Xu B (Xu B.) ; Yu LK (Yu L. K.) ; Sun J (Sun J.) ; Lei W (Lei W.) ; Wang ZG (Wang Z. G.) |
| 刊名 | materials science in semiconductor processing
 |
| 出版日期 | 2006 |
| 卷号 | 9期号:1-3页码:31-35 |
| 关键词 | Monte Carlo simulation molecular beam epitaxy kinetic effects quantum dot LAYER |
| ISSN号 | 1369-8001 |
| 通讯作者 | zhao, c, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: czhao@semi.ac.cn |
| 中文摘要 | performing an event-based continuous kinetic monte carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (qds). the relative positions between the qds and the dislocations are studied. the stress effects to the growth of the qds are considered in simulation. the simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor qds. (c) 2006 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10532]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao C ,Chen YH ,Zhao M ,et al. Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth[J]. materials science in semiconductor processing,2006,9(1-3):31-35. |
| APA | Zhao C .,Chen YH .,Zhao M .,Zhang CL .,Xu B .,...&Wang ZG .(2006).Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth.materials science in semiconductor processing,9(1-3),31-35. |
| MLA | Zhao C ,et al."Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth".materials science in semiconductor processing 9.1-3(2006):31-35. |
入库方式： OAI收割
来源：半导体研究所
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