Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation
文献类型：期刊论文
| 作者 | Islam MR (Islam M. R.) ; Chen NF (Chen N. F.) ; Yamada M (Yamada M.) |
| 刊名 | materials science in semiconductor processing
 |
| 出版日期 | 2006 |
| 卷号 | 9期号:1-3页码:184-187 |
| 关键词 | Raman scattering ferromagnetic semiconductor GaMnN ion implantation GROWTH GAN |
| ISSN号 | 1369-8001 |
| 通讯作者 | islam, mr, khulna univ engn & technol, dept elect & elect engn, khulna 920300, bangladesh. e-mail: islambit@yahoo.com |
| 中文摘要 | raman scattering measurements have been carried out on ferromagnetic semiconductor ga1-xmnxn prepared by mn-ion implantation and post annealing. the raman results obtained from the annealed and un-annealed ga1-xmnxn demonstrate that crystalline quality has been improved in ga1-xmnxn after annealing. some new vibrational modes in addition to gan-like modes are found in the raman spectra measured from the ga1-xmnxn where the gan-like modes are found to be shifted in the higher frequency side than those measured from the bulk gan. a new vibrational mode observed is assigned to mnn-like mode. other new phonon modes observed are assigned to disorder-activated modes and mn-related vibrational modes caused by mn-ion implantation and post-annealing. (c) 2006 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10536]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Islam MR ,Chen NF ,Yamada M . Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation[J]. materials science in semiconductor processing,2006,9(1-3):184-187. |
| APA | Islam MR ,Chen NF ,&Yamada M .(2006).Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation.materials science in semiconductor processing,9(1-3),184-187. |
| MLA | Islam MR ,et al."Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation".materials science in semiconductor processing 9.1-3(2006):184-187. |
入库方式： OAI收割
来源：半导体研究所
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