Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
文献类型：期刊论文
| 作者 | Sun GS (Sun G. S.) ; Liu XF (Liu X. F.) ; Gong QC (Gong Q. C.) ; Wang L (Wang L.) ; Zhao WS (Zhao W. S.) ; Li JY (Li J. Y.) ; Zeng YP (Zeng Y. P.) ; Li JM (Li J. M.) |
| 刊名 | materials science in semiconductor processing
 |
| 出版日期 | 2006 |
| 卷号 | 9期号:1-3页码:275-278 |
| ISSN号 | 1369-8001 |
| 关键词 | 4H-SiC homoepitaxial layers surface morphological defect optical microscopy SILICON-CARBIDE DISLOCATIONS FILMS |
| 通讯作者 | sun, gs, chinese acad sci, inst semicond, beijing 100083, peoples r china. e-mail: gshsun@red.semi.ac.cn |
| 中文摘要 | the morphological defects and uniformity of 4h-sic epilayers grown by hot wall cvd at 1500 degrees c on off-oriented (0001) si faces are characterized by atomic force microscope, nomarski optical microscopy, and micro-raman spectroscopy. typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like sic epilayers. the preparation of the substrate surface is necessary for the growth of high-quality 4h-sic epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10538]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun GS ,Liu XF ,Gong QC ,et al. Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces[J]. materials science in semiconductor processing,2006,9(1-3):275-278. |
| APA | Sun GS .,Liu XF .,Gong QC .,Wang L .,Zhao WS .,...&Li JM .(2006).Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces.materials science in semiconductor processing,9(1-3),275-278. |
| MLA | Sun GS ,et al."Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces".materials science in semiconductor processing 9.1-3(2006):275-278. |
入库方式： OAI收割
来源：半导体研究所
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