中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate

文献类型:期刊论文

作者Zhou HY ; Qu SC ; Wang ZG ; Liang LY ; Cheng BC ; Liu JP ; Peng WQ
刊名materials science in semiconductor processing
出版日期2006
卷号9期号:1-3页码:337-340
关键词anodic alumina films
ISSN号1369-8001
通讯作者zhou, hy, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: zhouhy@mail.semi.ac.cn
中文摘要self-ordered porous alumina films on a semi-insulated gaas substrate were prepared in oxalic acid aqueous solutions by three-step anodization. the i-t curve of anodization process was recorded to observe time effects of anodization. atomic force microscopy was used to investigate structure and morphology of alumina films. it was revealed that the case of oxalic acid resulted in a self-ordered porous structure, with the pore diameters of 60-70 nm, the pore density of the order of about 10(10) pore cm(-2), and interpore distances of 95-100nm. at the same time the pore size and shape change with the pore widening time. field-enhanced dissolution model and theory of deformation relaxation combined were brought forward to be the cause of self-ordered pore structure according to i-t curve of anodization and structure characteristics of porous alumina films. (c) 2006 elsevier ltd. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-04-11
源URL[http://ir.semi.ac.cn/handle/172111/10542]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zhou HY,Qu SC,Wang ZG,et al. Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate[J]. materials science in semiconductor processing,2006,9(1-3):337-340.
APA Zhou HY.,Qu SC.,Wang ZG.,Liang LY.,Cheng BC.,...&Peng WQ.(2006).Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate.materials science in semiconductor processing,9(1-3),337-340.
MLA Zhou HY,et al."Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate".materials science in semiconductor processing 9.1-3(2006):337-340.

入库方式: OAI收割

来源:半导体研究所

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