Defect influence on luminescence efficiency of GaN-based LEDs
文献类型：期刊论文
| 作者 | Li SP (Li Shuping) ; Fang ZL (Fang Zhilai) ; Chen HY (Chen Hangyang) ; Li JC (Li Jinchai) ; Chen XH (Chen Xiaohong) ; Yuan XL (Yuan Xiaoli) ; Sekiguchi T (Sekiguchi Takashi) ; Wang QM (Wang Qiming) ; Kang JY (Kang Junyong) |
| 刊名 | materials science in semiconductor processing
 |
| 出版日期 | 2006 |
| 卷号 | 9期号:1-3页码:371-374 |
| ISSN号 | 1369-8001 |
| 关键词 | defects GaN luminescence efficiency LED |
| 通讯作者 | kang, jy, xiamen univ, dept phys, xiamen 361005, peoples r china. e-mail: jykang@xmu.edu.cn |
| 中文摘要 | wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. the pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. the cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. the electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency. (c) 2006 elsevier ltd. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10544]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li SP ,Fang ZL ,Chen HY ,et al. Defect influence on luminescence efficiency of GaN-based LEDs[J]. materials science in semiconductor processing,2006,9(1-3):371-374. |
| APA | Li SP .,Fang ZL .,Chen HY .,Li JC .,Chen XH .,...&Kang JY .(2006).Defect influence on luminescence efficiency of GaN-based LEDs.materials science in semiconductor processing,9(1-3),371-374. |
| MLA | Li SP ,et al."Defect influence on luminescence efficiency of GaN-based LEDs".materials science in semiconductor processing 9.1-3(2006):371-374. |
入库方式： OAI收割
来源：半导体研究所
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