Electron irradiation-induced defects in InP pre-annealed at high temperature
文献类型：期刊论文
| 作者 | Zhao YW (Zhao Y. W.) ; Dong ZY (Dong Z. Y.) ; Deng AH (Deng A. H.) |
| 刊名 | materials science in semiconductor processing
 |
| 出版日期 | 2006 |
| 卷号 | 9期号:1-3页码:380-383 |
| 关键词 | indium phosphide defect irradiation THERMALLY STIMULATED CURRENT UNDOPED SEMIINSULATING INP DEEP-LEVEL DEFECTS FRENKEL PAIRS FE SPECTROSCOPY PHOSPHIDE AMBIENT TRAPS |
| ISSN号 | 1369-8001 |
| 通讯作者 | zhao, yw, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. e-mail: zhaoyw@red.semi.ac.cn |
| 中文摘要 | electron irradiation-induced deep level defects have been studied in inp which has undergone high-temperature annealing in phosphorus and iron phosphide ambients, respectively. in contrast to a high concentration of irradiation-induced defects in as-grown and phosphorus ambient annealed inp, inp pre-annealed in iron phosphide ambient has a very low concentration of defects. the phenomenon has been explained in terms of a faster recombination of radiation-induced defects in the annealed inp. the radiation-induced defects in the annealed inp have been compared and studied. (c) 2006 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10546]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao YW ,Dong ZY ,Deng AH . Electron irradiation-induced defects in InP pre-annealed at high temperature[J]. materials science in semiconductor processing,2006,9(1-3):380-383. |
| APA | Zhao YW ,Dong ZY ,&Deng AH .(2006).Electron irradiation-induced defects in InP pre-annealed at high temperature.materials science in semiconductor processing,9(1-3),380-383. |
| MLA | Zhao YW ,et al."Electron irradiation-induced defects in InP pre-annealed at high temperature".materials science in semiconductor processing 9.1-3(2006):380-383. |
入库方式： OAI收割
来源：半导体研究所
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