Nanostructure in the p-layer and its impacts on amorphous silicon solar cells
文献类型：期刊论文
| 作者 | Liao XB (Liao Xianbo) ; Du WH (Du Wenhui) ; Yang XS (Yang Xiesen) ; Povolny H (Povolny Henry) ; Xiang XB (Xiang Xianbi) ; Deng XM (Deng Xunming) ; Sun K (Sun Kai) |
| 刊名 | journal of non-crystalline solids
 |
| 出版日期 | 2006 |
| 卷号 | 352期号:9-20页码:1841-1846 |
| 关键词 | amorphous semiconductors solar cells microstructure OPEN-CIRCUIT VOLTAGE MICROCRYSTALLINE SILICON DISCONTINUITIES FILMS |
| ISSN号 | 0022-3093 |
| 通讯作者 | liao, xb, chinese acad sci, inst semicond, beijing 100083, peoples r china. e-mail: xbliao2003@yahoo.com |
| 中文摘要 | the open circuit voltage (v-oc) of n-i-p type hydrogenated amorphous silicon (a-si:h) solar cells has been examined by means of experimental and numerical modeling. the i- and p-layer limitations on v-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using raman spectroscopy, high resolution transmission electron microscopy (hrtem), optical transmittance and activation energy of dark-conductivity. the n-i-p a-si:h solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of v-oc from 1.042 v to 0.369 v, under identical i- and n-layer conditions. it is found that the nanocrystalline silicon (nc-si:h) p-layer with a certain nanocrystalline volume fraction leads to a higher v-oc. the optimum p-layer material for n-i-p type a-si:h solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10552]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liao XB ,Du WH ,Yang XS ,et al. Nanostructure in the p-layer and its impacts on amorphous silicon solar cells[J]. journal of non-crystalline solids,2006,352(9-20):1841-1846. |
| APA | Liao XB .,Du WH .,Yang XS .,Povolny H .,Xiang XB .,...&Sun K .(2006).Nanostructure in the p-layer and its impacts on amorphous silicon solar cells.journal of non-crystalline solids,352(9-20),1841-1846. |
| MLA | Liao XB ,et al."Nanostructure in the p-layer and its impacts on amorphous silicon solar cells".journal of non-crystalline solids 352.9-20(2006):1841-1846. |
入库方式： OAI收割
来源：半导体研究所
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