中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers

文献类型:期刊论文

作者Xu Y (Xu Ying) ; Hu ZH (Hu Zhihua) ; Diao HW (Diao Hongwei) ; Cai Y (Cai Yi) ; Zhang SB (Zhang Shibin) ; Zeng XB (Zeng Xiangbo) ; Hao HY (Hao Huiying) ; Liao XB (Liao Xianbo) ; Fortunato E (Fortunato Elvira) ; Martins R (Martins Rodrigo)
刊名journal of non-crystalline solids
出版日期2006
卷号352期号:9-20页码:1972-1975
关键词silicon solar cells heterojunctions nanocrystals CRYSTALLINE SILICON LAYER
ISSN号0022-3093
通讯作者hu, zh, new univ lisbon, dept mat sci, monte caparica, p-2829516 caparica, almada, portugal. e-mail: zhu@uninova.pt
中文摘要hydrogenated nanocrystalline silicon (nc-si:h) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-si) wafers. the nc-si:h n-layers were deposited by radio-frequency (rf) plasma enhanced chemical vapor deposition (pecvd), and characterized using raman spectroscopy, optical transmittance and activation energy of dark-conductivity. the nc-si:h n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. heterojunction solar cells incorporated with the nc-si n-layer were fabricated using configuration of ag (100 nm)/1t0 (80 nm)/n-nc-si:h (15 nm)/buffer a-si:h/p-c-si (300 mu m)/al (200 nm), where a very thin intrinsic a-si:h buffer layer was used to passivate the p-c-si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. the results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 elsevier b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-04-11
源URL[http://ir.semi.ac.cn/handle/172111/10558]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Xu Y ,Hu ZH ,Diao HW ,et al. Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers[J]. journal of non-crystalline solids,2006,352(9-20):1972-1975.
APA Xu Y .,Hu ZH .,Diao HW .,Cai Y .,Zhang SB .,...&Martins R .(2006).Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers.journal of non-crystalline solids,352(9-20),1972-1975.
MLA Xu Y ,et al."Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers".journal of non-crystalline solids 352.9-20(2006):1972-1975.

入库方式: OAI收割

来源:半导体研究所

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