Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers
文献类型：期刊论文
| 作者 | Xu Y (Xu Ying) ; Hu ZH (Hu Zhihua) ; Diao HW (Diao Hongwei) ; Cai Y (Cai Yi) ; Zhang SB (Zhang Shibin) ; Zeng XB (Zeng Xiangbo) ; Hao HY (Hao Huiying) ; Liao XB (Liao Xianbo) ; Fortunato E (Fortunato Elvira) ; Martins R (Martins Rodrigo) |
| 刊名 | journal of non-crystalline solids
 |
| 出版日期 | 2006 |
| 卷号 | 352期号:9-20页码:1972-1975 |
| 关键词 | silicon solar cells heterojunctions nanocrystals CRYSTALLINE SILICON LAYER |
| ISSN号 | 0022-3093 |
| 通讯作者 | hu, zh, new univ lisbon, dept mat sci, monte caparica, p-2829516 caparica, almada, portugal. e-mail: zhu@uninova.pt |
| 中文摘要 | hydrogenated nanocrystalline silicon (nc-si:h) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-si) wafers. the nc-si:h n-layers were deposited by radio-frequency (rf) plasma enhanced chemical vapor deposition (pecvd), and characterized using raman spectroscopy, optical transmittance and activation energy of dark-conductivity. the nc-si:h n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. heterojunction solar cells incorporated with the nc-si n-layer were fabricated using configuration of ag (100 nm)/1t0 (80 nm)/n-nc-si:h (15 nm)/buffer a-si:h/p-c-si (300 mu m)/al (200 nm), where a very thin intrinsic a-si:h buffer layer was used to passivate the p-c-si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. the results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10558]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu Y ,Hu ZH ,Diao HW ,et al. Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers[J]. journal of non-crystalline solids,2006,352(9-20):1972-1975. |
| APA | Xu Y .,Hu ZH .,Diao HW .,Cai Y .,Zhang SB .,...&Martins R .(2006).Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers.journal of non-crystalline solids,352(9-20),1972-1975. |
| MLA | Xu Y ,et al."Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers".journal of non-crystalline solids 352.9-20(2006):1972-1975. |
入库方式： OAI收割
来源：半导体研究所
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