Temperature dependence of surface quantum dots grown under frequent growth interruption
文献类型：期刊论文
| 作者 | Jin P ; Xu B
|
| 刊名 | physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2006 |
| 卷号 | 33期号:1页码:207-210 |
| 关键词 | growth interruption in segregation surface oxide molecular beam epitaxy quantum dots MOLECULAR-BEAM EPITAXY GAAS PHOTOLUMINESCENCE LAYER SHAPE SIZE |
| ISSN号 | 1386-9477 |
| 通讯作者 | yu, lk, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: yulike@red.semi.ac.cn |
| 中文摘要 | we grow ingaas quantum dot (qd) at low growth rate with 70 times insertion of growth interruption in mbe system. it is found that because of the extreme growth condition, qds exhibit a thick wetting layer, large qd height value and special surface morphology which is attributed to the enhanced adatom surface diffusion and in-segregation effect. temperature dependence of photoluminescence measurement from surface qd shows that this kind of qd has good thermal stability which is explained in terms of the presence of surface oxide. the special distribution of qd may also play a role in this thermal character. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10580]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jin P,Xu B. Temperature dependence of surface quantum dots grown under frequent growth interruption[J]. physica e-low-dimensional systems & nanostructures,2006,33(1):207-210. |
| APA | Jin P,&Xu B.(2006).Temperature dependence of surface quantum dots grown under frequent growth interruption.physica e-low-dimensional systems & nanostructures,33(1),207-210. |
| MLA | Jin P,et al."Temperature dependence of surface quantum dots grown under frequent growth interruption".physica e-low-dimensional systems & nanostructures 33.1(2006):207-210. |
入库方式： OAI收割
来源：半导体研究所
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