AlGaInAs narrow stripe selective growth on substrates patterned with different mask designs
文献类型：期刊论文
| 作者 | Pan JQ
|
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 2006 |
| 卷号 | 39期号:11页码:2330-2334 |
| 关键词 | VAPOR-PHASE EPITAXY BURIED-HETEROSTRUCTURE LASERS BANDGAP ENERGY CONTROL QUANTUM-WELL LASERS PRESSURE MOVPE AREA GROWTH INGAALAS LAYERS |
| ISSN号 | 0022-3727 |
| 通讯作者 | feng, w, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. e-mail: wfeng@semi.ac.cn |
| 中文摘要 | we have performed a narrow stripe selective growth of oxide-free a1gainas waveguides on inp substrates patterned with pairs of sio2 mask stripes under optimized growth conditions. the mask stripe width varied from 0 to 40 mu m, while the window region width between a pair of mask stripes was fixed at 1.5, 2.5 or 3.5 mu m. flat and smooth a1gainas waveguides covered by specific inp layers are successfully grown on substrates patterned with different mask designs. the thickness enhancement ratio and the photoluminescence (pl) spectrum of the a1gainas narrow stripe waveguides are strongly dependent on the mask stripe width and the window region width. in particular, a large pl wavelength shift of 79 nm and a pl fwhm of less than 64 mev are obtained simultaneously with a small mask stripe width varying from 0 to 40 mu m when the window region width is 1.5 mu m. we present some possible interpretations of the experimental observations in considering both the migration effect from a masked region and the lateral vapour diffusion effect. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10584]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan JQ. AlGaInAs narrow stripe selective growth on substrates patterned with different mask designs[J]. journal of physics d-applied physics,2006,39(11):2330-2334. |
| APA | Pan JQ.(2006).AlGaInAs narrow stripe selective growth on substrates patterned with different mask designs.journal of physics d-applied physics,39(11),2330-2334. |
| MLA | Pan JQ."AlGaInAs narrow stripe selective growth on substrates patterned with different mask designs".journal of physics d-applied physics 39.11(2006):2330-2334. |
入库方式： OAI收割
来源：半导体研究所
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