Electron g factors and optical properties of InAs quantum ellipsoids
文献类型：期刊论文
| 作者 | Zhang XW ; Zhu YH ; Xia JB |
| 刊名 | journal of physics-condensed matter
 |
| 出版日期 | 2006 |
| 卷号 | 18期号:20页码:4945-4954 |
| 关键词 | COLLOIDAL SEMICONDUCTOR NANOCRYSTALS SHAPE-CONTROL DEPENDENT PROPERTIES CDSE NANOCRYSTALS LEVEL STRUCTURE DOTS MECHANISMS EVOLUTION RODS INSB |
| ISSN号 | 0953-8984 |
| 通讯作者 | zhang, xw, chinese ctr adv sci & technol, world lab, pob 8730, beijing 100080, peoples r china. |
| 中文摘要 | the electronic structure, electron g factors and optical properties of inas quantum ellipsoids are investigated, in the framework of the eight-band effective-mass approximation. it is found that the light-hole states come down in comparison with the heavy-hole states when the spheres are elongated, and become the lowest states of the valence band. circularly polarized emissions under circularly polarized excitations may have opposite polarization factors to the exciting light. for inas ellipsoids the length, which is smaller than 35 nm, is still in a strongly quantum-confined regime. the electron g factors of inas spheres decrease with increasing radius, and are nearly 2 when the radius is very small. the quantization of the electron states quenches the orbital angular momentum of the states. actually, as some of the three dimensions increase, the electron g factors decrease. as more dimensions increase, the g factors decrease more. the dimensions perpendicular to the direction of the magnetic field affect the g factors more than the other dimension. the magnetic field along the z axis of the crystal structure causes linearly polarized emissions in the spheres, which emit unpolarized light in the absence of magnetic field. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10604]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang XW,Zhu YH,Xia JB. Electron g factors and optical properties of InAs quantum ellipsoids[J]. journal of physics-condensed matter,2006,18(20):4945-4954. |
| APA | Zhang XW,Zhu YH,&Xia JB.(2006).Electron g factors and optical properties of InAs quantum ellipsoids.journal of physics-condensed matter,18(20),4945-4954. |
| MLA | Zhang XW,et al."Electron g factors and optical properties of InAs quantum ellipsoids".journal of physics-condensed matter 18.20(2006):4945-4954. |
入库方式： OAI收割
来源：半导体研究所
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