Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors
文献类型：期刊论文
| 作者 | Zhang XW
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 88期号:24页码:art.no.242108 |
| 关键词 | MOLECULAR-BEAM EPITAXY CHEMICAL-VAPOR-DEPOSITION ENERGY-GAP 100 GAAS INASSB INAS1-XSBX ALLOYS INSB TRANSPORT LAYERS |
| ISSN号 | 0003-6951 |
| 通讯作者 | peng, ct, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: ctpeng@red.semi.ac.cn |
| 中文摘要 | high-quality inasxsb1-x (0 < x <= 0.3) films are grown on gaas substrates by liquid phase epitaxy and electrical and optical properties of the films are investigated, revealing that the films exhibit hall mobilities higher than 2x10(4) cm(2) v-1 s(-1) and cutoff wavelengths longer than 10 mu m at room temperature (rt). photoconductors are fabricated from the films, and notable photoresponses beyond 8 mu m are observed at rt. in particular, for an inas0.3sb0.7 film, a photoresponse of up to 13 mu m with a maximum responsivity of 0.26 v/w is obtained at rt. hence, the inasxsb1-x films demonstrate attractive properties suitable for room-temperature, long-wavelength infrared detectors. (c) 2006 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10616]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang XW. Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors[J]. applied physics letters,2006,88(24):art.no.242108. |
| APA | Zhang XW.(2006).Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors.applied physics letters,88(24),art.no.242108. |
| MLA | Zhang XW."Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors".applied physics letters 88.24(2006):art.no.242108. |
入库方式： OAI收割
来源：半导体研究所
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