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Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD
文献类型：期刊论文
| 作者 | Ran JX ; Wang XL ; Hu GX ; Wang JX ; Li JP ; Wang CM ; Zeng YP ; Li JM |
| 刊名 | microelectronics journal
 |
| 出版日期 | 2006 |
| 卷号 | 37期号:7页码:583-585 |
| 关键词 | GaN Mg memory effect redistribution AlGaN/GaN HBTs MOCVD CHEMICAL-VAPOR-DEPOSITION HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATION |
| ISSN号 | 0026-2692 |
| 通讯作者 | ran, jx, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. e-mail: jxran@red.semi.ac.cn |
| 中文摘要 | algan/gan npn heterojunction bipolar transistor structures were grown by low-pressure mocvd. secondary ion mass spectroscopy (sims) measurements were carried out to study the mg memory effect and redistribution in the emitter-base junction. the results indicated that there is a mg-rich film formed in the ongrowing layer after the cp2mg source is switched off. the mg-rich film can be confined in the base section by switching off the cp2mg source for appropriate time before the end of base growth. low temperature growth of the undoped gan spacer suppresses the mg redistribution from mg rich film. the delay rate of the mg profile in sample c with spacer growing in low temperature is about 56 nm/decade, which becomes sharper than 80 nm/decade of the samples a and b without low temperature spacer. (c) 2005 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10618]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ran JX,Wang XL,Hu GX,et al. Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD[J]. microelectronics journal,2006,37(7):583-585. |
| APA | Ran JX.,Wang XL.,Hu GX.,Wang JX.,Li JP.,...&Li JM.(2006).Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD.microelectronics journal,37(7),583-585. |
| MLA | Ran JX,et al."Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD".microelectronics journal 37.7(2006):583-585. |
入库方式： OAI收割
来源：半导体研究所
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