Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots
文献类型：期刊论文
| 作者 | Zhou WM ; Wang CY ; Chen YH ; Wang ZG |
| 刊名 | chinese physics
 |
| 出版日期 | 2006 |
| 卷号 | 15期号:6页码:1315-1319 |
| 关键词 | quantum dots strain and stress distribution strain energy finite element method ISLANDS GROWTH GAAS GAAS(001) EVOLUTION |
| ISSN号 | 1009-1963 |
| 通讯作者 | zhou, wm, zhejiang univ technol, coll mech & elect engn, hangzhou 310032, peoples r china. |
| 中文摘要 | in this paper, we perform systematic calculations of the stress and strain distributions in inas/gaas truncated pyramidal quantum dots (qds) with different wetting layer (wl) thickness, using the finite element method (fem). the stresses and strains are concentrated at the boundaries of the wl and qds, are reduced gradually from the boundaries to the interior, and tend to a uniform state for the positions away from the boundaries. the maximal strain energy density occurs at the vicinity of the interface between the wl and the substrate. the stresses, strains and released strain energy are reduced gradually with increasing wl thickness. the above results show that a critical wl thickness may exist, and the stress and strain distributions can make the growth of qds a growth of strained three-dimensional island when the wl thickness is above the critical value, and fem can be applied to investigate such nanosystems, qds, and the relevant results are supported by the experiments. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10624]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou WM,Wang CY,Chen YH,et al. Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots[J]. chinese physics,2006,15(6):1315-1319. |
| APA | Zhou WM,Wang CY,Chen YH,&Wang ZG.(2006).Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots.chinese physics,15(6),1315-1319. |
| MLA | Zhou WM,et al."Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots".chinese physics 15.6(2006):1315-1319. |
入库方式： OAI收割
来源：半导体研究所
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