High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD
文献类型：期刊论文
| 作者 | Pan JQ
|
| 刊名 | acta physica sinica
 |
| 出版日期 | 2006 |
| 卷号 | 55期号:6页码:2982-2985 |
| 关键词 | ultra-low-pressure selective area growth tapered mask BANDGAP ENERGY CONTROL INTEGRATED DFB LASER EPITAXY |
| ISSN号 | 1000-3290 |
| 通讯作者 | zhao, q, chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china. e-mail: qzhao@red.semi.ac.cn |
| 中文摘要 | high quality ingaasp/ingaasp multiple quantum wells ( mqws) have been selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition. a large bandgap energy shift of 46 nm and photoluminescence with fwhm less than 30 mev were obtained with a rather small mask width variation (15-30 mu m). in order to study the uniformity of the mqws grown in the selective area, novel tapered masks were employed, and the transition effect w the tapered region was also studied. the energy detuning of the tapered region was observed to be saturated at larger ratios of the mask width to the tapered region length. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10630]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan JQ. High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD[J]. acta physica sinica,2006,55(6):2982-2985. |
| APA | Pan JQ.(2006).High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD.acta physica sinica,55(6),2982-2985. |
| MLA | Pan JQ."High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD".acta physica sinica 55.6(2006):2982-2985. |
入库方式： OAI收割
来源：半导体研究所
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