Photon localization and lasing in disordered GaNxAs1-x optical superlattices
文献类型：期刊论文
| 作者 | Jiang DS
|
| 刊名 | physical review b
 |
| 出版日期 | 2006 |
| 卷号 | 73期号:19页码:art.no.195112 |
| 关键词 | RANDOM LASER SCATTERING MEDIA LIGHT ABSORPTION CAVITIES GAIN |
| ISSN号 | 1098-0121 |
| 通讯作者 | sun, bq, chinese acad sci, inst semicond, sklsm, pob 911, beijing 100083, peoples r china. e-mail: bqsun@red.semi.ac.cn |
| 中文摘要 | we propose an approach to fabricate a disordered optical superlattice using microcracking faces in ganxas1-x epilayers. laser action is observed and the emission exhibits random laser behaviors. a transfer-matrix simulation suggests photon localization occurs at the lasing modes. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10632]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS. Photon localization and lasing in disordered GaNxAs1-x optical superlattices[J]. physical review b,2006,73(19):art.no.195112. |
| APA | Jiang DS.(2006).Photon localization and lasing in disordered GaNxAs1-x optical superlattices.physical review b,73(19),art.no.195112. |
| MLA | Jiang DS."Photon localization and lasing in disordered GaNxAs1-x optical superlattices".physical review b 73.19(2006):art.no.195112. |
入库方式： OAI收割
来源：半导体研究所
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