Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1-xNx alloys: A microphotoluminescence study
文献类型：期刊论文
| 作者 | Tan PH (Tan P. H.) ; Luo XD (Luo X. D.) ; Xu ZY (Xu Z. Y.) ; Zhang Y (Zhang Y.) ; Mascarenhas A (Mascarenhas A.) ; Xin HP (Xin H. P.) ; Tu CW (Tu C. W.) ; Ge WK (Ge W. K.) |
| 刊名 | physical review b
 |
| 出版日期 | 2006 |
| 卷号 | 73期号:20页码:art.no.205205 |
| 关键词 | HOT PHOTOLUMINESCENCE GALLIUM-ARSENIDE GAAS SEMICONDUCTORS LUMINESCENCE SCATTERING |
| ISSN号 | 1098-0121 |
| 通讯作者 | tan, ph, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. e-mail: pinghengtan@hotmail.com ; yong_zhang@nrel.gov |
| 中文摘要 | using microphotoluminescence (mu-pl), in dilute n gaas1-xnx alloys, we observe a pl band far above the bandgap e-0 with its peak energy following the so-called e+ transition, but with contribution from perturbed gaas host states in a broad spectral range (> 100 mev). this finding is in sharp contrast to the general understanding that e+ is associated with a well-defined conduction band level (either l-1c or n-x). beyond this insight regarding the strong perturbation of the gaas band structure caused by n incorporation, we demonstrate that a small amount of isoelectronic doping in conjunction with mu-pl allows direct observation of above-bandgap transitions that are not usually accessible by pl. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10634]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Tan PH ,Luo XD ,Xu ZY ,et al. Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1-xNx alloys: A microphotoluminescence study[J]. physical review b,2006,73(20):art.no.205205. |
| APA | Tan PH .,Luo XD .,Xu ZY .,Zhang Y .,Mascarenhas A .,...&Ge WK .(2006).Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1-xNx alloys: A microphotoluminescence study.physical review b,73(20),art.no.205205. |
| MLA | Tan PH ,et al."Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1-xNx alloys: A microphotoluminescence study".physical review b 73.20(2006):art.no.205205. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。