Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer
文献类型：期刊论文
| 作者 | Ye XL ; Xu B; Jin P
|
| 刊名 | journal of the electrochemical society
 |
| 出版日期 | 2006 |
| 卷号 | 153期号:7页码:g703-g706 |
| 关键词 | GAAS SPECTROSCOPY PARAMETERS TRANSPORT LASERS ENERGY STATES HOLE |
| ISSN号 | 0013-4651 |
| 通讯作者 | sun, j, lund univ, se-22100 lund, sweden. e-mail: albertjefferson@sohu.com |
| 中文摘要 | molecular beam epitaxy was employed to manufacture self-assembled inas/gaas quantum dot schottky resonant tunneling diodes. by virtue of a thin alas insertion barrier, the thermal current was effectively reduced and electron resonant tunneling through quantum dots under both forward and reverse biased conditions was observed at relatively high temperature of 77 k. the ground states of quantum dots were found to be at similar to 0.19 ev below the conduction band of gaas matrix. the theoretical computations were in conformity with experimental data. (c) 2006 the electrochemical society. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10638]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ye XL,Xu B,Jin P. Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer[J]. journal of the electrochemical society,2006,153(7):g703-g706. |
| APA | Ye XL,Xu B,&Jin P.(2006).Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer.journal of the electrochemical society,153(7),g703-g706. |
| MLA | Ye XL,et al."Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer".journal of the electrochemical society 153.7(2006):g703-g706. |
入库方式： OAI收割
来源：半导体研究所
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