Interfaces in heterostructures of AlInGaN/GaN/Al2O3
文献类型：期刊论文
| 作者 | Zhou SQ ; Wu MF ; Yao SD ; Liu JP ; Yang H |
| 刊名 | superlattices and microstructures
 |
| 出版日期 | 2006 |
| 卷号 | 39期号:5页码:429-435 |
| 关键词 | nitride semiconductors interface Rutherford backscattering/channeling transmission electron microscopy x-ray diffraction SUPER-LATTICES STRAIN GAN |
| ISSN号 | 0749-6036 |
| 通讯作者 | zhou, sq, peking univ, sch phys, beijing 100871, peoples r china. e-mail: s.zhou@rossendorf.de ; sdyao@pku.edu.cn |
| 中文摘要 | rutherford backscattering/channeling (rbs/c) and x-ray diffraction (xrd) are used to comprehensively characterize a heterostructure of alingan/gan/al2o3(0001). the alingan quaternary layer was revealed to process a high crystalline quality with a minimum yield of 1.4% from rbs/c measurements. the channeling spectrum of (1 (2) under bar 13) exhibits higher dechanneling than that of (0001) at the interface of alingan/gan. xrd measurements prove a coherent growth of alingan on the gan template layer. combining rbs/c and xrd measurements, we found that the interface of gan/al2o3 is a nucleation layer, composed of a large amount of disorders and cubic gan slabs, while the interface of alingan/gan is free of extra disordering (i.e. compare with the gan layer). the conclusion is further evidenced by transmission electron microscopy (tem). (c) 2005 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10642]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou SQ,Wu MF,Yao SD,et al. Interfaces in heterostructures of AlInGaN/GaN/Al2O3[J]. superlattices and microstructures,2006,39(5):429-435. |
| APA | Zhou SQ,Wu MF,Yao SD,Liu JP,&Yang H.(2006).Interfaces in heterostructures of AlInGaN/GaN/Al2O3.superlattices and microstructures,39(5),429-435. |
| MLA | Zhou SQ,et al."Interfaces in heterostructures of AlInGaN/GaN/Al2O3".superlattices and microstructures 39.5(2006):429-435. |
入库方式： OAI收割
来源：半导体研究所
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