Selective growth of InAs islands on patterned GaAs (100) substrate
文献类型：期刊论文
| 作者 | Xu B ; Jin P
|
| 刊名 | superlattices and microstructures
 |
| 出版日期 | 2006 |
| 卷号 | 39期号:5页码:446-453 |
| 关键词 | patterned substrate molecular beam epitaxy quantum dots InAs GaAs InGaAs ASSEMBLED QUANTUM DOTS MOLECULAR-BEAM EPITAXY FABRICATION |
| ISSN号 | 0749-6036 |
| 通讯作者 | cui, cx, chinese acad sci, inst semicond, lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: cxcui@red.semi.ac.cn |
| 中文摘要 | by a combination of prepatterned substrate and self-organized growth, inas islands are grown on the stripe-patterned gaas (100) substrate by solid-source molecular beam epitaxy. it is found that the inas quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate or molecular beam epitaxy growth conditions. when a inxga(1-x)as strained layer is grown first before inas deposition, almost all the inas quantum dots are deposited at the edges of the top ridge. and when the inas deposition amount is larger, a quasi-quantum wire structure is found. the optical properties of the inas dots on the patterned substrate are also investigated by photoluminescence. (c) 2005 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10644]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B,Jin P. Selective growth of InAs islands on patterned GaAs (100) substrate[J]. superlattices and microstructures,2006,39(5):446-453. |
| APA | Xu B,&Jin P.(2006).Selective growth of InAs islands on patterned GaAs (100) substrate.superlattices and microstructures,39(5),446-453. |
| MLA | Xu B,et al."Selective growth of InAs islands on patterned GaAs (100) substrate".superlattices and microstructures 39.5(2006):446-453. |
入库方式： OAI收割
来源：半导体研究所
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