Q-switched and mode-locked diode-pumped Nd : GdVO4 laser with low temperature GaAs saturable absorber
文献类型：期刊论文
| 作者 | Liu J ; Wang YG ; Tian WM ; Gao LY ; He JL ; Ma XY |
| 刊名 | optical materials
 |
| 出版日期 | 2006 |
| 卷号 | 28期号:8-9页码:970-973 |
| 关键词 | LT-GaAs Nd : GdVO4 diode-pump laser mode-locking Q-switching ND-YVO4 LASER LOCKING MIRROR YAG |
| ISSN号 | 0925-3467 |
| 通讯作者 | liu, j, shandong normal univ, coll phys & elect, jinan 250014, peoples r china. e-mail: jieliu@sdnu.edu.cn |
| 中文摘要 | low temperature gaas (lt-gaas) was successfully grown at the temperature of 550 degrees c by metal organic vapor phase epitaxy on a semi-insular gaas substrate. with such an absorber as well as an output coupler we obtain q-switched mode-locked (qml) 1064 nm nd:gdvo4 laser pumped by diode laser with high repetition rate, formed with a simple flat-flat cavity. the repetition rate of the q-switched envelope increased from 100 to 660 khz as the pump power increased from 2.28 to 7.29 w. the mode-locked pulses inside the q-switched pulse envelope had a repetition rate of similar to 1.36 ghz. a maximum average output power of 953 mw was obtained. the dependence of the operational parameters on the pump power was also investigated experimentally. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10650]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu J,Wang YG,Tian WM,et al. Q-switched and mode-locked diode-pumped Nd : GdVO4 laser with low temperature GaAs saturable absorber[J]. optical materials,2006,28(8-9):970-973. |
| APA | Liu J,Wang YG,Tian WM,Gao LY,He JL,&Ma XY.(2006).Q-switched and mode-locked diode-pumped Nd : GdVO4 laser with low temperature GaAs saturable absorber.optical materials,28(8-9),970-973. |
| MLA | Liu J,et al."Q-switched and mode-locked diode-pumped Nd : GdVO4 laser with low temperature GaAs saturable absorber".optical materials 28.8-9(2006):970-973. |
入库方式： OAI收割
来源：半导体研究所
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