The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity
文献类型：期刊论文
| 作者 | Wang XF ; Zeng YP ; Wang BQ ; Zhu ZP ; Du XQ ; Li M ; Chang BK |
| 刊名 | applied surface science
 |
| 出版日期 | 2006 |
| 卷号 | 252期号:12页码:4104-4109 |
| ISSN号 | 0169-4332 |
| 关键词 | structure NEA integrated photosensitivity GaAs Cs : O SPECTRAL RESPONSE NEA PHOTOCATHODES LAYER THICKNESS CS SURFACE PHOTOEMISSION SYSTEM |
| 通讯作者 | wang, xf, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. e-mail: xiaofw@red.semi.ac.cn |
| 中文摘要 | a new structure of gaas photocathode was introduced. the be-doping concentration is variable in the new structure compared with the constant concentration of be in the normal photocathode. negative electron affinity gaas photocathodes were fabricated by alternate input of cs and o. the spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathodes with the new structure is enhanced by at least 50% as compared to those with the monolayer structure. accordingly, two main factors leading to the enhanced photosensitivity of the photocathodes were discussed. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10654]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang XF,Zeng YP,Wang BQ,et al. The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity[J]. applied surface science,2006,252(12):4104-4109. |
| APA | Wang XF.,Zeng YP.,Wang BQ.,Zhu ZP.,Du XQ.,...&Chang BK.(2006).The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity.applied surface science,252(12),4104-4109. |
| MLA | Wang XF,et al."The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity".applied surface science 252.12(2006):4104-4109. |
入库方式： OAI收割
来源：半导体研究所
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