Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD
文献类型：期刊论文
| 作者 | Liang S ; Pan JQ
|
| 刊名 | chinese physics
 |
| 出版日期 | 2006 |
| 卷号 | 15期号:5页码:1114-1119 |
| 关键词 | self-assembled quantum dots indium arsenide bimodal size distribution MOCVD CHEMICAL-VAPOR-DEPOSITION MU-M ISLANDS DENSITY EPITAXY LASER |
| ISSN号 | 1009-1963 |
| 通讯作者 | liang, s, chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china. e-mail: liangsong@red.semi.ac.cn |
| 中文摘要 | self-assembled inas quantum dots (qds) are grown on vicinal gaas (100) substrates by using metal-organic chemical vapour deposition (mocvd). an abnormal temperature dependence of bimodal size distribution of inas quantum dots is found. as the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of qds on exact gaas (100) substrates. this trend is explained by taking into account the presence of multiatomic steps on the substrates. the optical properties of inas qds on vicinal gaas(100) substrates are also studied by photoluminescence (pl). it is found that dots on a vicinal substrate have a longer emission wavelength, a narrower pl line width and a much larger pl intensity. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10664]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liang S,Pan JQ. Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD[J]. chinese physics,2006,15(5):1114-1119. |
| APA | Liang S,&Pan JQ.(2006).Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD.chinese physics,15(5),1114-1119. |
| MLA | Liang S,et al."Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD".chinese physics 15.5(2006):1114-1119. |
入库方式： OAI收割
来源：半导体研究所
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