Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure
文献类型：期刊论文
| 作者 | Wang WJ ; Yang XD ; Ma BS ; Sun Z ; Su FH ; Ding K ; Xu ZY ; Li GH ; Zhang Y ; Mascarenhas A ; Xin HP ; Tu CW |
| 刊名 | applied physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 88期号:20页码:art.no.201917 |
| 关键词 | PAIR LUMINESCENCE GAP-N GAAS EXCITONS ALLOY |
| ISSN号 | 0003-6951 |
| 通讯作者 | wang, wj, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. e-mail: wwjgr@mail.semi.ac.cn |
| 中文摘要 | the lifetimes of a series of n-related photoluminescence lines (a(2)-a(6)) in gaas1-xnx (x=0.1%) were studied under hydrostatic pressures at similar to 30 k. the lifetimes of a(5) and a(6) were found to increase rapidly with increasing pressure: from 2.1 ns at 0 gpa to more than 20 ns at 0.92 gpa for a(5) and from 3.2 ns at 0.63 gpa to 10.8 ns at 0.92 gpa for a(6). the lifetime is found to be closely correlated with the binding energy of the n impurity states, which is shown either in the pressure dependence for a given emission line or in the lifetime variation from a(2) to a(6). (c) 2006 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10666]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang WJ,Yang XD,Ma BS,et al. Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure[J]. applied physics letters,2006,88(20):art.no.201917. |
| APA | Wang WJ.,Yang XD.,Ma BS.,Sun Z.,Su FH.,...&Tu CW.(2006).Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure.applied physics letters,88(20),art.no.201917. |
| MLA | Wang WJ,et al."Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure".applied physics letters 88.20(2006):art.no.201917. |
入库方式： OAI收割
来源：半导体研究所
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