中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication of metallic air bridges using multiple-dose electron beam lithography

文献类型:期刊论文

作者Liu J
刊名applied physics letters
出版日期2006
卷号88期号:20页码:art.no.202103
关键词SILICON VOLTAGE
ISSN号0003-6951
通讯作者girgis, e, natl res ctr, dept solid state phys, el behoos st, cairo 11325, egypt. e-mail: e_girgis@nrc.sci.eg
中文摘要the techniques of fabricating metallic air bridges using different resists in a one-step electron beam lithography are presented. the exposure process employed a single-layer polymethyl methacrylate (pmma) or photoresists with either different doses in the span and feet areas or with varying acceleration voltage of the electron beam. the process using photoresists with different doses has produced air bridges more stable than what the pmma method using various acceleration voltages would achieve. using this method, air bridges up to 12 mu m long have been fabricated. the length and height of these metallic air bridges vary with the photoresist thickness. (c) 2006 american institute of physics.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-04-11
源URL[http://ir.semi.ac.cn/handle/172111/10668]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Liu J. Fabrication of metallic air bridges using multiple-dose electron beam lithography[J]. applied physics letters,2006,88(20):art.no.202103.
APA Liu J.(2006).Fabrication of metallic air bridges using multiple-dose electron beam lithography.applied physics letters,88(20),art.no.202103.
MLA Liu J."Fabrication of metallic air bridges using multiple-dose electron beam lithography".applied physics letters 88.20(2006):art.no.202103.

入库方式: OAI收割

来源:半导体研究所

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