Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template
文献类型：期刊论文
| 作者 | Liu Z ; Wang JX ; Wang XL ; Hu GX ; Guo LC ; Liu HX ; Li JP ; Li JM ; Zeng YP |
| 刊名 | journal of rare earths
 |
| 出版日期 | 2006 |
| 卷号 | 24期号:sp.iss.si页码:40495 |
| 关键词 | surface morphology GaN/Si template GaN MOCVD ALLOYS MOVPE |
| ISSN号 | 1002-0721 |
| 通讯作者 | wang, jx, chinese acad sci, inst semicond, novel mat lab, beijing 100083, peoples r china. e-mail: jxwang@red.semi.ac.cn |
| 中文摘要 | the surface morphology of gan grown by mocvd on gan/si template was studied. rough morphology and deep pinhole defects on some surface areas of the samples were observed and studied. the formation of rough morphology is possibly related to ga-si alloy produced due to poor thermal stability of template at high temperature. the deep pinhole defects generated are deep down to the surface of mbe-grown gan/si template. the stress originated from the large thermal expansion coefficient difference between gan and si may be related to the formation of the pinhole defects. the surface morphology of the gan can be improved by optimizing the gan/si template and decreasing the growth temperature. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10684]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu Z,Wang JX,Wang XL,et al. Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template[J]. journal of rare earths,2006,24(sp.iss.si):40495. |
| APA | Liu Z.,Wang JX.,Wang XL.,Hu GX.,Guo LC.,...&Zeng YP.(2006).Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template.journal of rare earths,24(sp.iss.si),40495. |
| MLA | Liu Z,et al."Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template".journal of rare earths 24.sp.iss.si(2006):40495. |
入库方式： OAI收割
来源：半导体研究所
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