Growth and characterization of semi-insulating GaN films grown by MOCVD
文献类型：期刊论文
| 作者 | Fang CB ; Wang XL ; Hu GX ; Wang JX ; Wang CM ; Li JM |
| 刊名 | journal of rare earths
 |
| 出版日期 | 2006 |
| 卷号 | 24期号:sp.iss.si页码:14-18 |
| 关键词 | MOCVD GaN resistivity TSC N-TYPE GAN DOPED GAN SPECTROSCOPY CARBON FE |
| ISSN号 | 1002-0721 |
| 通讯作者 | wang, xl, chinese acad sci, inst semicond, beijing 100083, peoples r china. e-mail: xlwang@red.semi.ac.cn |
| 中文摘要 | high resistivity unintentionally doped gan films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. the surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. the results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. the full width at half maximum of double crystal x-ray diffraction rocking curve for (0002) gan is about 5.22 arc-min, indicative of high crystal quality. the resistivity of the gan epilayers at room temperature and at 250 degrees c was measured to be approximate 10(9) and 10(6) omega(.)cm respectively, by variable temperature hall measurement. deep level traps in the gan epilayers were investigated by thermally stimulated current and resistivity measurements. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10686]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Fang CB,Wang XL,Hu GX,et al. Growth and characterization of semi-insulating GaN films grown by MOCVD[J]. journal of rare earths,2006,24(sp.iss.si):14-18. |
| APA | Fang CB,Wang XL,Hu GX,Wang JX,Wang CM,&Li JM.(2006).Growth and characterization of semi-insulating GaN films grown by MOCVD.journal of rare earths,24(sp.iss.si),14-18. |
| MLA | Fang CB,et al."Growth and characterization of semi-insulating GaN films grown by MOCVD".journal of rare earths 24.sp.iss.si(2006):14-18. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。