Growth of high quality semi-insulating InP single crystal by suppression of compensation defects
文献类型：期刊论文
| 作者 | Zhao YW ; Dong ZY ; Duan ML ; Sun WR ; Yang ZX |
| 刊名 | journal of rare earths
 |
| 出版日期 | 2006 |
| 卷号 | 24期号:sp.iss.si页码:75-77 |
| 关键词 | indium phosphide defect semi-insualting STIMULATED CURRENT SPECTROSCOPY CURRENT TRANSIENT SPECTROSCOPY SEMI-INSULATING INP DEEP-LEVEL DEFECTS FE |
| ISSN号 | 1002-0721 |
| 通讯作者 | zhao, yw, chinese acad sci, inst semicond, beijing 100083, peoples r china. e-mail: zhaoyw@red.semi.ac.cn |
| 中文摘要 | deep level defects in as-grown and annealed si-inp samples were investigated by thermally stimulated current spectroscopy. correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in si-inp were revealed. an optimized crystal growth condition for high quality si-inp was demonstrated based on the experimental results. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10688]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao YW,Dong ZY,Duan ML,et al. Growth of high quality semi-insulating InP single crystal by suppression of compensation defects[J]. journal of rare earths,2006,24(sp.iss.si):75-77. |
| APA | Zhao YW,Dong ZY,Duan ML,Sun WR,&Yang ZX.(2006).Growth of high quality semi-insulating InP single crystal by suppression of compensation defects.journal of rare earths,24(sp.iss.si),75-77. |
| MLA | Zhao YW,et al."Growth of high quality semi-insulating InP single crystal by suppression of compensation defects".journal of rare earths 24.sp.iss.si(2006):75-77. |
入库方式： OAI收割
来源：半导体研究所
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