Aluminium doping induced enhancement of p-d coupling in ZnO
文献类型：期刊论文
| 作者 | Han XX ; Wei HY
|
| 刊名 | journal of physics-condensed matter
 |
| 出版日期 | 2006 |
| 卷号 | 18期号:11页码:3081-3087 |
| 关键词 | ELECTRONIC-STRUCTURE CALCULATIONS II-VI SEMICONDUCTORS THIN-FILMS PHOTOELECTRON-SPECTROSCOPY DOPED ZNO 1ST-PRINCIPLES CONDUCTION STATES |
| ISSN号 | 0953-8984 |
| 通讯作者 | cong, gw, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: gwcong@semi.ac.cn |
| 中文摘要 | valence-band type auger lines in al doped and undoped zno were comparatively studied with the corresponding core level x-ray photoelectron spectrography (xps) spectra as references. then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d states downwards with increasing al concentration. the decreased energy of the zn 3d state is larger than the increased energy of the 0 2p state, indicating the lowering of total energy. this may indicate that al doping could induce the enhancement of p-d coupling in zno, which originates from stronger al-o hybridization. the shifts of these states and the mechanism were confirmed by valence band xps spectra and 0 k-edge x-ray absorption spectrography (xas) spectra. finally, some previously reported phenomena are explained based on the al doping induced enhancement of p-d coupling. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10696]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han XX,Wei HY. Aluminium doping induced enhancement of p-d coupling in ZnO[J]. journal of physics-condensed matter,2006,18(11):3081-3087. |
| APA | Han XX,&Wei HY.(2006).Aluminium doping induced enhancement of p-d coupling in ZnO.journal of physics-condensed matter,18(11),3081-3087. |
| MLA | Han XX,et al."Aluminium doping induced enhancement of p-d coupling in ZnO".journal of physics-condensed matter 18.11(2006):3081-3087. |
入库方式： OAI收割
来源：半导体研究所
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