Optical anisotropy and strain evolution of GaAs surfaces at the onset of the formation of InAs quantum dots
文献类型：期刊论文
| 作者 | Ye XL ; Xu B; Jin P
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2006 |
| 卷号 | 99期号:7页码:art.no.073507 |
| 关键词 | REFLECTANCE DIFFERENCE SPECTROSCOPY LAYER |
| ISSN号 | 0021-8979 |
| 通讯作者 | chen, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: yhchen@red.semi.ac.cn |
| 中文摘要 | by using reflectance difference spectroscopy we have studied the in-plane optical anisotropy of gaas surfaces covered by ultrathin inas layers. the strain evolution of the gaas surface with the inas deposition thickness can be obtained. it is found that the optical anisotropy and the surface tensile strain attain maximum values at the onset of the formation of inas quantum dots (qds) and then decrease rapidly as more inas qds are formed with the increase of inas deposition. the origin of the optical anisotropy has been discussed. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10716]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ye XL,Xu B,Jin P. Optical anisotropy and strain evolution of GaAs surfaces at the onset of the formation of InAs quantum dots[J]. journal of applied physics,2006,99(7):art.no.073507. |
| APA | Ye XL,Xu B,&Jin P.(2006).Optical anisotropy and strain evolution of GaAs surfaces at the onset of the formation of InAs quantum dots.journal of applied physics,99(7),art.no.073507. |
| MLA | Ye XL,et al."Optical anisotropy and strain evolution of GaAs surfaces at the onset of the formation of InAs quantum dots".journal of applied physics 99.7(2006):art.no.073507. |
入库方式： OAI收割
来源：半导体研究所
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