中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optical anisotropy and strain evolution of GaAs surfaces at the onset of the formation of InAs quantum dots

文献类型:期刊论文

作者Ye XL; Xu B; Jin P
刊名journal of applied physics
出版日期2006
卷号99期号:7页码:art.no.073507
关键词REFLECTANCE DIFFERENCE SPECTROSCOPY LAYER
ISSN号0021-8979
通讯作者chen, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: yhchen@red.semi.ac.cn
中文摘要by using reflectance difference spectroscopy we have studied the in-plane optical anisotropy of gaas surfaces covered by ultrathin inas layers. the strain evolution of the gaas surface with the inas deposition thickness can be obtained. it is found that the optical anisotropy and the surface tensile strain attain maximum values at the onset of the formation of inas quantum dots (qds) and then decrease rapidly as more inas qds are formed with the increase of inas deposition. the origin of the optical anisotropy has been discussed.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-04-11
源URL[http://ir.semi.ac.cn/handle/172111/10716]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Ye XL,Xu B,Jin P. Optical anisotropy and strain evolution of GaAs surfaces at the onset of the formation of InAs quantum dots[J]. journal of applied physics,2006,99(7):art.no.073507.
APA Ye XL,Xu B,&Jin P.(2006).Optical anisotropy and strain evolution of GaAs surfaces at the onset of the formation of InAs quantum dots.journal of applied physics,99(7),art.no.073507.
MLA Ye XL,et al."Optical anisotropy and strain evolution of GaAs surfaces at the onset of the formation of InAs quantum dots".journal of applied physics 99.7(2006):art.no.073507.

入库方式: OAI收割

来源:半导体研究所

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