Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers
文献类型：期刊论文
| 作者 | Xu YQ ; Yang XH
|
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2006 |
| 卷号 | 21期号:3页码:279-282 |
| 关键词 | MOLECULAR-BEAM EPITAXY IMPROVED LUMINESCENCE EFFICIENCY QUANTUM-WELLS ORIGIN |
| ISSN号 | 0268-1242 |
| 通讯作者 | zhao, h, chinese acad sci, inst semicond, natl lab superlatt & microstruct, pob 912, beijing 100083, peoples r china. e-mail: zhaohuan@red.semi.ac.cn |
| 中文摘要 | rapid thermal annealing (rta) has been demonstrated as an important way to improve the crystal quality of gainnas(sb)/gaas quantum wells. however little investigation has been made into their application in laser growth, especially at a wavelength of 1.55 mu m. when a gaas-based laser is grown, algaas is usually used for cladding layers. the growth of the p-cladding layer usually takes 30-45 min at a growth temperature higher than that of the gainnas(sb) active region, which affects the material quality. to investigate this effect, various post-growth annealing processes were performed to simulate this process. great enhancement of the pl intensity was obtained by a two-step process which consisted of annealing first at 700 degrees c for 60 s and then at 600 degrees c for 45 min. we transferred this post-growth annealing to in situ annealing. finally, a gainnassb laser was grown with a 700 degrees c in situ annealing process. continuous operation at room temperature of a gaas-based dilute nitride laser with a wavelength beyond 1.55 mu m was realized for the first time. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10724]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu YQ,Yang XH. Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers[J]. semiconductor science and technology,2006,21(3):279-282. |
| APA | Xu YQ,&Yang XH.(2006).Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers.semiconductor science and technology,21(3),279-282. |
| MLA | Xu YQ,et al."Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers".semiconductor science and technology 21.3(2006):279-282. |
入库方式： OAI收割
来源：半导体研究所
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