Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates
文献类型：期刊论文
| 作者 | Wei HY
|
| 刊名 | nanotechnology
 |
| 出版日期 | 2006 |
| 卷号 | 17期号:5页码:1251-1254 |
| 关键词 | OPTICAL-PROPERTIES RAMAN-SCATTERING EPILAYERS LUMINESCENCE ALINGAN PHONON LAYERS FILMS ALN GAN |
| ISSN号 | 0957-4484 |
| 通讯作者 | wu, jj, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: jiejunw@red.semi.ac.cn |
| 中文摘要 | the temperature dependence of the formation of nano-scale indium clusters in inalgan quaternary alloys, which are grown by metalorganic chemical vapour deposition on gan/si(111) epilayers, is investigated. firm evidence is provided to support the existence of phase separation, or nano-scale in-rich clusters, by the combined results of high-resolution transmission electron microscopy (hrtem), high-resolution x-ray diffraction (hrxrd) and micro-raman spectra. the results of hrxrd and raman spectra indicate that the degree of phase separation is strong and the number of in clusters in the inalgan layers on silicon substrate is higher at lower growth temperatures than that at higher growth temperatures, which limits the in and al incorporated into the inalgan quaternary alloys. the detailed mechanism of luminescence in this system is studied by low temperature photoluminescence (lt-pl). we conclude that the ultraviolet (uv) emission observed in the quaternary inalgan alloys arises from the matrix of a random alloy, and the second emission peak in the blue-green region results from the nano-scale indium clusters. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10732]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wei HY. Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates[J]. nanotechnology,2006,17(5):1251-1254. |
| APA | Wei HY.(2006).Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates.nanotechnology,17(5),1251-1254. |
| MLA | Wei HY."Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates".nanotechnology 17.5(2006):1251-1254. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。